Scanning tunnelling microscopy measurements and ab initio total energy calculations showed that certain sub-monolayer coverages of Sb on Si(113), which was a stable surface resembling a mixture of Si(001) and Si(111), forced some atoms into interstitial sites. The geometry was novel for surface reconstruction, but closely related to the structure of bulk rod-like defects. This qualitative behaviour of group-V atoms on silicon showed that studies of passivated surfaces could provide data which were useful for the verification of bulk defect models.

Surface Reconstruction Suggests a Nucleation Mechanism in Bulk - Sb/Si(113) and {113} Planar Defects. J.Dabrowski, H.J.Müssig, G.Wolff, S.Hinrich: Surface Science, 1998, 411[1-2], 54-60

3 x 2 Reconstruction of Si (113)