An investigation was made of a Cs-induced reconstruction, on the Si(113)-(3 x 2) surface, using low-energy electron diffraction and X-ray photo-electron spectroscopy. For Cs deposition at room temperature, the (3 x 1) low-energy electron diffraction pattern was observed for a wide range of Cs coverages. At high substrate temperatures, the (3 x 1), (1 x 5+2x) and (2 x 2) phases were observed with increasing Cs deposition time. The relative Cs saturation coverages of (3 x 1)-Cs at room temperature, and (2 x 2)-Cs at 300C, were deduced from Cs 3d/Si 2p core level X-ray photo-electron spectroscopy intensity ratios. The results were summarized in a phase diagram as a function of the Cs deposition time.

Cesium-Induced Reconstruction on Si(113)3 x 2 Surface Studied by Low Energy Electron Diffraction and X-Ray Photoelectron Spectroscopy. K.S.An, C.C.Hwang, R.J.Park, J.B.Lee, J.S.Kim, C.Y.Park, S.B.Lee, A.Kimura, A.Kakizaki: Japanese Journal of Applied Physics, 1997, 36, 2833-6