The atomic structure of the high-temperature 3 x 1 phase on the Si(113) surface was studied by transmission electron diffraction. The Si(113) was made by heating a thin Si(001) film at 1550K for a few hours followed by quenching. The Si(113) surface appeared on one side of the thin film. This (113) surface was observed with the incident electron beam parallel to the [001] direction. From the Patterson map and R-factor calculation, the experimental results could not explain the Ranke and Dabrowski models. A new model was proposed which had a vacancy under the dimer belonging to the pentagon. Patterson maps of the experimental and this model agree well, and the R-factor was smaller than in the other two models.

Reconstruction of the Si(113) Surface Studied by Transmission Electron Diffraction. H.Ikeda, Y.Oshima, H.Hirayama, K.Takayanagi: Surface Science, 1999, 433-435, 632-6