In a field-ion-microscopy study of thermally equilibrated Si surfaces at 800C, two distinctly different atomic structures of a silicon surface were observed at the (230) poles. A model for this reconstruction was presented. One of the image structures, with a rhombic unit cell, could be formed by dimerization of top- and fifth-layer atoms and a shift, in both the vertical and horizontal directions, of third-layer atoms. The other image structure, with a rectangular unit cell, could be formed by the displacement of top- and fourth-layer atoms.

Atomic Reconstruction of the Silicon (230) Surface. T.T.Tsong, H.M.Liu, D.L.Feng: Physical Review B, 1987, 36, 4446-8