A comparative study of porous silicon fabricated by laser-induced etching on n-type crystalline-silicon and n-type polysilicon substrates was presented here under near resonance conditions by employing a Nd:YAG laser. A scanning electron microscopic study of the two porous silicon samples, prepared under identical processing conditions, elucidated differences in surface morphology. An analysis of the Raman and photoluminescence spectra from the two porous silicon materials, employing quantum confinement models, was presented and it further elucidated differences in the nanocrystallites size distributions. A qualitative explanation for the differences was presented.

Surface Reconstruction of Silicon and Polysilicon by Nd:YAG Laser Etching: SEM, Raman and PL Studies. B.G.Rasheed, H.S.Mavi, A.K.Shukla, S.C.Abbi, K.P.Jain: Materials Science and Engineering B, 2001, 79[1], 71-7