ZnS epilayers were grown by molecular beam epitaxy onto (001) GaAs from elemental zinc and sulphur sources. Reflection high-energy electron diffraction measurements were performed to study the surface reconstruction of (001) ZnS and to establish a surface reconstruction diagram in order to find the optimum growth conditions. The dependence of the growth rate of ZnS on the substrate temperature and on the beam pressure ratio ps/pzn was measured. The strain relaxation of the ZnS epilayers was determined by high-resolution reflection high-energy electron diffraction measurements. The low-temperature photoluminescence spectra of the ZnS epilayers show sharp ultraviolet exciton lines and a blue deep-centre emission.

Molecular Beam Epitaxy of ZnS on (001) GaAs using Elemental Sources. M.Lang, D.Schikora, C.Giftge, T.Widmer, A.Forstner, G.Brunthaler, M.von Ortenberg, K.Lischka: Semiconductor Science and Technology, 1994, 9[12], 2229-32