Growth processes in MOMBE of ZnSe were characterized by in situ reflection high-energy electron diffraction monitoring. Se pre-treatment of the substrate surface prior to the growth results in (2 x 1) reconstruction, which could originate from the Ga-Se bonds. After the growth starts, the VI/II ratio and the growth temperature must be low so that ridges were not formed initially. These pre-treatments and growth conditions successfully avoid the interdiffusion of constituent elements at the ZnSe/GaAs hetero-interface. During the epitaxial growth, Zn- and Se-stabilized surfaces take c(2 x 2) and (2 x 1) reconstruction patterns, respectively. Alternate irradiation of DMZn and DMSe resulted in an alternate change in the reflection high-energy electron diffraction patterns, and layer-by-layer growth could be achieved by controlling the supply sequence according to the reflection high-energy electron diffraction patterns.

Surface Reconstruction and Stabilization in MOMBE of ZnSe Revealed by in situ RHEED Monitoring. S.Fujita, N.Yoshimura, Y.H.Wu, S.Fujita: Journal of Crystal Growth, 1990, 101[1-4], 78-80