Using an evaporation chamber equipped with a ZnSe compound source, ZnSe was grown onto GaAs(001) and the surface was characterized by using low-energy electron diffraction, Raman scattering spectroscopy and reflectance anisotropy spectroscopy. High-quality ZnSe layers were obtained and were revealed, by low-energy electron diffraction, to have a c(2 x 2) surface reconstruction. Reflectance anisotropy spectra were measured, and proved to be reproducible when a similar surface was obtained by de-capping a Se-capped ZnSe(001) sample.

Reflectance Anisotropy and Raman Scattering Spectroscopy Studies of ZnSe Grown on GaAs(001). D.Spaltmann, S.J.Morris, C.C.Matthai, R.H.Williams: Journal of Physics D, 1995, 28[12], 2574-7