It was recalled that electromigration was an important mechanism of deformation and failure in miniaturized electronics materials. A two-dimensional mesoscopic simulation method was developed for analyzing electromigration-induced stress in thin films and finite element method was implemented for solution. Numerical simulations were compared with theoretical result and comparisons validate the model. The method has advantage in describing boundary conditions for constrained diffusion when focusing on creep process of thin films.

A 2-D Mesoscopic Model Coupling Mechanical and Diffusion for Electromigration in Thin Films. Y.X.Zheng, L.S.Niu: Computational Materials Science, 2009, 46[2], 443-6