It was recalled that piezospectroscopic analysis of point defects permitted the description of fixed defects embedded in a crystalline environment of immobile atoms. This description worked well when all of the atoms vibrated around fixed equilibrium positions, when these vibrations were much faster than the time-scale of an experiment and when the equilibrium positions did not evolve within the time-scale. For some defects, these condition did not hold at the temperatures of deep-level transient spectroscopic experiments, and this could be reflected by a departure from theoretical predictions. On the other hand, systematic discrepancies between the results of theoretical piezospectroscopic analysis and experiment could themselves be a valuable source of information about a defect. It was considered how reorientation processes could be identified from observed piezospectroscopic parameters for a number of defect complexes observed in silicon and germanium by using high-resolution Laplace deep-level transient spectroscopy.

Piezospectroscopic Analysis of Mobile Defects in Semiconducting Materials. L.Dobaczewski, A.R.Peaker, V.P.Markevich, I.D.Hawkins, K.Bonde Nielsen: Physica Status Solidi C, 2008, 5[2], 529-34