The interface morphology, chemistry and dislocation structures of some typical wafer-bonded compound semiconductors were characterized. The relationships between the interface dislocation structures and their electrical performances were considered. The interface chemistry of the semiconductors was analysed by using electron energy loss spectrometry. In general, differing wafer annealing conditions could result in various interface crystalline to amorphous ratios. It was found that the interface oxides started to segregate and formed scattered interface amorphous nano-inclusions during wafer thermal annealing. A mismatched wafer-bonded hetero-interface was accommodated by elastic strain relief via a combination of Lomer edge dislocations and interface amorphous nano-inclusions. Differing annealing temperatures could result in differing morphologies and oxygen concentrations of the nano-inclusions. It was suggested that the formation of these interface nano-inclusions, possibly with highly concentrated oxygen, was a result of interface atomic diffusion and oxide relocation processes.

Interface Morphology, Chemistry and Dislocation Structures of Wafer-Bonded Compound Semiconductors. F.F.Shi, K.L.Chang, K.C.Hsieh: Journal of Physics D, 2009, 42[8], 085310