A study was made, of the thermal capture of an electron by a smooth dislocation kink, with regard to the problem of recombination-enhanced dislocation motion in semiconductors. It was found that multi-phonon capture became possible due to localization of the carrier on the kink. The localized state on the smooth kink was studied in the deformation potential approximation. In this case, the potential created by the kink could be described by the Poschl–Teller function, which made it possible to find an analytical expression for the eigenstates and the corresponding wave functions. Using the ground-state wave-function, it was then possible to find the multi-phonon capture cross-section for two limiting temperature cases corresponding to thermally activated and quantum transitions between vibronic terms.

Multi-Phonon Capture of Charge Carriers by Dislocation Kinks in Semiconductors. A.S.Vardanyan, R.A.Vardanyan, A.A.Kteyan: Journal of Physics and Chemistry of Solids, 2008, 69[11], 2785-90