An analysis of the morphology of the extended defects revealed behind dislocation in the slip plane of silicon was presented. These extended defects showed an electrical activity contradictorily to dislocations themselves; this was confirmed by Electron Induced Surface Potential measurements. It was shown, that the generation of these extended defects was a common phenomenon for diamond lattice materials. The defects generation which has to be elucidated was considered to be relevant to a dynamical dislocation core structure during the plastic deformation of semiconductor materials with covalent lattice.

Extended Defects Generated in the Slip Plane by Moving Dislocation in Diamond Lattice Crystals: Morphology and Properties. V.Eremenko, J.L.Demenet, J.Rabier: Physica Status Solidi C, 2009, 6[8], 1801-6