Etching experiments were performed that revealed the vertical distribution of

optically active nitrogen-vacancy centers in diamond created in close proximity to

a surface through ion implantation and annealing. The nitrogen-vacancy

distribution depends strongly on the native nitrogen concentration, and spectral

measurements of the neutral and negatively charged nitrogen-vacancy peaks give

evidence for electron depletion effects in lower-nitrogen material. The results were

important for potential quantum information and magnetometer devices where

nitrogen-vacancy centers must be created in close proximity to a surface for

coupling to optical structures.

Vertical Distribution of Nitrogen-Vacancy Centers in Diamond Formed by Ion

Implantation and Annealing. C.Santori, P.E.Barclay, K.M.C.Fu, R.G.Beausoleil:

Physical Review B, 2009, 79[12], 125313