The morphology and the electronic structure of a single focused ion-beam-induced

artificial extended defect was probed using several methods including micro-

Raman spectroscopy, atomic force and scanning tunneling microscopy and Monte

Carlo and/or semi-analytical simulation within standard codes. The efficiency of

the artificial defect for deposited metallic cluster pinning was also investigated. A

correlation was found between the ion dose, morphology, electronic structure and

cluster trapping efficiency. At room temperature, cluster pinning was efficient

when the displacement per atom was one or more.

Ion Beam Nanopatterning in Graphite: Characterization of Single Extended

Defects. P.Mélinon, A.Hannour, L.Bardotti, B.Prével, J.Gierak, E.Bourhis, G.Faini,

B.Canut: Nanotechnology, 2008, 19[23], 235305