An analysis was made of the electronic properties of a simple stacking defect in

Bernal graphite. It was shown that a bound state formed which dispersed as |k−K|3,

in the vicinity of either of the two inequivalent zone corners, K. In the presence of

a strong c-axis magnetic field, this bound state developed a Landau-level structure

which, for low energies, had En proportional to |nB|3/2. It was shown that buried

stacking faults had observable consequences for surface spectroscopy, and the

implications for the three-dimensional quantum Hall effect were considered. Also

analyzed were the Landau-level structure and chiral surface states of rhombohedral

graphite and this showed that, when doped, it should exhibit multiple threedimensional

quantum Hall effect plateaux at modest fields.

Stacking Faults, Bound States, and Quantum Hall Plateaus in Crystalline

Graphite. D.P.Arovas, F.Guinea: Physical Review B, 2008, 78[24], 245416