Tracer diffusion coefficients of 67Cu and 64Cu in CVD β-silicon carbide were

measured at 623 to 1373K by using a serial ion-beam sputter-microsectioning

technique. The temperature dependence of the diffusion coefficient was described

by:

D (m2/s) = 8.2 x 10-16exp[-41(kJ/mol)/RT]

The diffusion coefficient of Cu in β-SiC was larger than those of Si and C by more

than six orders of magnitude and those of Fe and Cr by one to three orders of

magnitude. The activation energy for the diffusion of Cu was about one twentieth

of that for self-diffusion. The results suggested that an interstitial mechanism

operated in the diffusion of Cu in β-SiC.

Tracer Diffusion of Cu in CVD β-SiC. A.Suino, Y.Yamazaki, H.Nitta, K.Miura,

H.Seto, R.Kanno, Y.Iijima, H.Sato, S.Takeda, E.Toya, T.Ohtsuki: Journal of

Physics and Chemistry of Solids, 2008, 69[2-3], 311-4