A theoretical description of the interactions of micropipes with each other, as well

as with the free surface of the growing crystal, was given. As a result, the

experimental observations of ramifying micropipes were explained and the

conditions for micropipe splitting and possible further overgrowth were calculated.

Also provided were the results of computer simulations of the evolution of a

random ensemble of micropipes during the growth of bulk SiC crystals. The

simulation confirmed the presence of both planar and twisted configurations of

micropipes observed by means of synchrotron radiation X-ray phase-sensitive radiography. Finally, the elastic interaction of micropipes with inclusions of

minority polytypes in bulk SiC crystals were considered. It was demonstrated that

micropipes were attracted to the minority polytype boundaries and could form

pores that grew along these boundaries.

Micropipes in Silicon Carbide Crystals. M.Y.Gutkin, A.G.Sheinerman,

T.S.Argunova: Physica Status Solidi C, 2009, 6[8], 1942-7