A model was presented for the formation mechanism of dislocation half-loop

arrays formed during the homo-epitaxial growth of 4H-SiC. The reorientation

during glide of originally screw oriented threading segments of basal plane

dislocation rendered them susceptible to conversion into sessile threading edge

dislocations, which subsequently pin the motion of the basal plane dislocation. Continued glide during further growth enables parts of the mobile basal plane

dislocation to escape through the surface leaving arrays of half loops comprising

two threading edge dislocations and a short basal plane dislocation segment with

significant edge component. The faulting behaviour of the arrays under UV

excitation was consistent with this model.

Nucleation Mechanism of Dislocation Half-Loop Arrays in 4H-Silicon Carbide

Homo-Epitaxial Layers. N.Zhang, Y.Chen, Y.Zhang, M.Dudley, R.E.Stahlbush:

Applied Physics Letters, 2009, 94[12], 122108