A correlated reduction in the cross-sections of two neighbouring micropipes during

the crystal growth of silicon carbide was revealed via the computer simulation of phase contrast images. The correlated reduction was explained by the exchange of

full-core dislocations in a contact-free reaction between two parallel micropipes. A

theoretical model was developed which described the energetics of this process.

Correlated Reduction in Micropipe Cross Sections in SiC Growth . M.Y.Gutkin,

A.G.Sheinerman, M.A.Smirnov, V.G.Kohn, T.S.Argunova, J.H.Je, J.W.Jung:

Applied Physics Letters, 2008, 93[15], 151905