The electrical activities of stacking faults and partial dislocations in 4H-SiC homoepitaxial

films were investigated by using the electron-beam-induced current

technique. The basal plane dislocation was dissociated into Si(g)30º and C(g)30º

partials under electron-beam irradiation, with a stacking fault formed in between.

The stacking fault exhibited bright contrast at room temperature and dark contrast

at 50K in electron beam induced current images. The reasons were discussed

according to the quantum-well state of stacking faults. C(g)30º partial was always

more electrically active than Si(g)30º partial at each specific accelerating voltage.

The electron beam induced current contrasts of the two partials were discussed

with the number of recombination centers.

Electrical Activities of Stacking Faults and Partial Dislocations in 4H-SiC Homo-

Epitaxial Films. B.Chen, J.Chen, T.Sekiguchi, T.Ohyanagi, H.Matsuhata,

A.Kinoshita, H.Okumura, F.Fabbri: Superlattices and Microstructures, 2009, 45[4-

5], 295-300