Parameters of electrically active defect centres in vanadium-doped 6H silicon

carbide were investigated by means of -photo-induced transient spectroscopy and

modulated photocurrent methods. The main aim was to understand and explain the

experimental results. In particular, in the photo-induced transient spectroscopy

technique a shallow level seemed to be at the origin of negative photoconductivity.

In the same temperature range, hole and electron levels could be detected at the

same time. Finally, the detection of a given level seemed to depend upon the

photon flux used to perform the photo-induced transient spectroscopy. As far as the

modulated photocurrent experiment was concerned, it revealed a very efficient

shallow level. A numerical calculation was developed to simulate both experiments

in order to understand the experimental results. By means of this simulation, all of

the phenomena observed experimentally for each technique were explained and a simple model was proposed for the distribution of electrically active defect centres

in 6H-SiC:V crystals.

Characterization of Defect Levels in Semi-Insulating 6H-SiC by Means of Photo-

Induced Transient Spectroscopy and Modulated Photocurrent Technique.

C.Longeaud, J.P.Kleider, P.Kaminski, R.Kozlowski, M.Miczuga: Journal of

Physics - Condensed Matter, 2009, 21[4], 045801