Unintentionally doped 4H-SiC homo-epitaxial layers grown by hot-wall chemical

vapour deposition (HWCVD) were studied using photoluminescence (PL)

technique at 10 to 240K. A broadband green luminescence was observed.

Vacancies of carbon (VC) were revealed by electron spin resonance at 110K. The

results strongly suggested that the green band luminescence, as shallow donor-deep

accepter emission, was attributed to the vacancies of C and the extended defects.

The broadband green luminescence spectrum can be fitted by the two Gauss-type

spectra using nonlinear optimization technique. It showed that the broadband green

luminescence originates from the combination of two independent radiative

transitions. The centers of two energy levels were located 2.378 and 2.130eV

below the conduction band, respectively, and the ends of two energy levels were

expanded and superimposed each other.

Deep Level Defects in Unintentionally Doped 4H-SiC Homo-Epitaxial Layer.

R.Jia, Y.Zhang, Y.Wang, L.Zhang: Journal of Semiconductors, 2009, 30[3],

033003