The formation of in-grown stacking faults in chemical vapour deposition grown

4H-SiC epilayer was studied by high-resolution transmission electron microscopy

and low-temperature photoluminescence. Local inhomogeneities in the SF density

were found, where different stacking fault arrangements appear. They range from

pure 8H-SiC unit cells to a few distinguished sequences, forming in some cases

long-range semi-periodic incommensurate structures. Despite such large

dispersion, the same optical low-temperature photoluminescence signature was

always found. This was discussed in the light of coupled quantum well models.

Combined Structural and Optical Studies of Stacking Faults in 4H-SiC Layers

Grown by Chemical Vapour Deposition. M.Marinova, T.Robert, S.Juillaguet,

I.Tsiaoussis, N.Frangis, E.Polychroniadis, J.Camassel, T.Chassagne: Physica

Status Solidi A, 2009, 206[8], 1924-30