It was recalled that the planar defect density of 3C-SiC could be reduced by

growing it onto undulant-Si substrates. However, specific stacking faults remained

that exposed the Si-face on the (001) surface. These residual stacking faults

increased the leakage current in devices made with 3C-SiC. They could be

eliminated by using an advanced stacking-fault reduction method called switchback

epitaxy that combined polarity conversion with homo-epitaxial growth.

Fabrication of High Performance 3C-SiC Vertical MOSFETS by Reducing Planar

Defects. H.Nagasawa, M.Abe, K.Yagi, T.Kawahara, N.Hatta: Physica Status Solidi

B, 2008, 245[7], 1272-80