Threading dislocations and their transformation into stacking faults were observed

in p-type 4H-SiC epitaxial layers by high voltage transmission electron

microscope. Homoepitaxial growth and in situ aluminum doping of 4H-SiC

epitaxial layers were carried out using the organosilicon precursor

bistrimethylsilylmethane (C7H20Si2 and the metal-organic precursor

trimethylaluminum (C3H9Al), and the free hole concentration of the most heavily

aluminium-doped epitaxial layers was >1021cm−3. Threading dislocations were

formed at the interface between the epitaxial layer and the substrate. However, the

density of these threading dislocations decreased toward the epitaxial layer surface

with their transformations to stacking faults.

Observation of Stacking Faults Formed During Homo-Epitaxial Growth of p-Type

4H-SiC. H.K.Song, J.H.Moon, H.J.Kim, M.Mehregany: Applied Physics Letters,

2009, 94[11], 112109