4H-SiC epilayers were characterized by microphotoluminescence (micro-PL)

spectroscopy and micro-PL intensity mapping at room temperature. A type of

stacking fault with a peak emission wavelength at 480nm (2.58eV) was identified. The shape of this SF was triangular revealed by the micro-PL intensity mapping.

Conventional and high-resolution transmission electron microscopy was carried out

to investigate the structure of this stacking fault. Its stacking sequence was

determined to be (3,5) in Zhdanov's notation, which was consistent with that of the

triple Shockley stacking fault.

Triple Shockley Type Stacking Faults in 4H-SiC Epilayers. G.Feng, J.Suda,

T.Kimoto: Applied Physics Letters, 2009, 94[9], 091910