Non-polar AlN layers were grown on 4H-SiC (1¯1•0) substrates by plasma-assisted

molecular-beam epitaxy. By using SiC substrates with well-formed step-andterrace

structures, stable layer-by-layer growth of 4H-AlN (1¯1•0) can be realized.

The layer-by-layer growth was confirmed by observations of anisotropic twodimensional

AlN islands on the grown surface as well as persistent reflection highenergy

electron diffraction intensity oscillations. Cross-sectional transmission

electron microscopy observations revealed that stacking fault generation during

growth was suppressed and the stacking fault density was reduced to 106cm−1.

Nonpolar 4H-AlN Grown on 4H-SiC (1¯100) with Reduced Stacking Fault Density

Realized by Persistent Layer-by-Layer Growth. M.Horita, T.Kimoto, J.Suda:

Applied Physics Letters, 2008, 93[8], 082106