The vacancy-type defects in (Ga,Mn)N films grown by metal organic chemical

vapour deposition were studied using positron annihilation techniques. Doppler

broadening spectra were measured. Compared to the undoped GaN film, the

positron trapping defects in the (Ga,Mn)N films changed to a new type of defect

and its concentration increased with increasing Mn concentration. By analyzing the

S-W correlation plots and previous results, this type of defect in (Ga,Mn)N was

identified as being a VN-MnGa complex.

Positron Annihilation in (Ga, Mn)N: a Study of Vacancy-Type Defects. X.L.Yang,

W.X.Zhu, C.D.Wang, H.Fang, T.J.Yu, Z.J.Yang, G.Y.Zhang, X.B.Qin, R.S.Yu,

B.Y.Wang: Applied Physics Letters, 2009, 94[15], 151907