An investigation was made of the effects of nitrogen vacancies (VN), introduced by

Mn doping, on the electronic structure and transport properties of (Ga,Mn)N films

grown by metal organic chemical vapour deposition. The significant increase in ntype

carrier concentration in the (Ga,Mn)N film was attributed to the additional VN

induced by Mn doping. Temperature-dependent Hall data indicate that the

additional VN was the dominant scattering mechanism in the (Ga,Mn)N film in

higher temperature regions. The Mn L2,3 X-ray absorption spectra of the (Ga,Mn)N

film exhibited a multiplet structure, indicating that the Mn ions were present

mainly in the Mn2+(d5) states. These can be attributed to the electrons transferring

from VN, which was well consistent with the electrical properties. An energy level

model involving the charge transfer was proposed to explain the observed

electronic structure and transport properties in the system.

Effects of Nitrogen Vacancies Induced by Mn Doping in (Ga,Mn)N Films Grown

by MOCVD. X.L.Yang, Z.T.Chen, C.D.Wang, S.Huang, H.Fang, G.Y.Zhang,

D.L.Chen, W.S.Yan: Journal of Physics D, 2008, 41[12], 125002