A sandwiched multi-structure made of alternatively undoped and vanadium-doped

GaN layers was grown onto SiN-treated (00•1) sapphire substrates by atmosphericpressure

metal-organic chemical vapour deposition. The V diffusion in GaN was

investigated at 1000 to 1100C by using secondary ion mass spectroscopy. The

diffusion coefficients were obtained through a data-fitting program based upon

Fick's first law. The results suggested that V diffused faster near to the

GaN/sapphire interface. During annealing, V redistributed via both in- and out diffusion mechanisms. An activation energy of 2.9eV was estimated for V

diffusion in GaN.

Diffusion Behaviour of Vanadium in GaN Thin Films Studied by Secondary Ion

Mass Spectrometry. A.Bchetnia, C.Saidi, M.Souissi, T.Boufaden, B.El Jani:

Semiconductor Science and Technology, 2009, 24[9], 095020