The contrast of dislocations perpendicular to the surface in the electron beam

induced current mode in GaN films was studied by a computer simulation and was

measured experimentally. It was shown that contrary to the case of traditional

semiconductors, the profile width of dislocation EBIC contrast in the crystals with

small diffusion length decreases with beam energy increasing. It was shown that

the contrast decay with distance to a dislocation could not be used for the direct

diffusion length measurements. Instead, to estimate the diffusion length value a

comparison of total simulated dislocation profile with the experimental one should

be used. A similar conclusion could be drawn for the dislocation contrast in the

cathodoluminescence mode.

Profile of EBIC Dislocation Contrast in Semiconductors with Small Diffusion

Length. E.B.Yakimov: Physica Status Solidi C, 2009, 6[8], 1983-6