Undoped GaN layers with a thickness of 278μm were grown via the hydride

vapour phase epitaxy method. The samples with different threading dislocation

densities of 9.0 x 106/cm2 and 7.2 x 106/cm2 were irradiated with electron beams

having an energy of 1MeV, to a dose of 1015/cm2. The defect states of the samples after electron-beam irradiation were characterized by deep-level transient

spectroscopy measurements. After electron-beam irradiation, the defects appeared

to states with activation energies of 0.61, 0.30 and 0.57eV.

Dislocation Related Defect States in GaN Irradiated with 1MeV Electron-Beam.

D.U.Lee, L.K.Ha, J.S.Kim, E.K.Kim, E.K.Koh, I.K.Han: Physica Status Solidi C,

2008, 5[6], 1630-2