The effect of edge-type dislocation wall strain field on the Hall mobility in n-type

epitaxial GaN was theoretically investigated through the deformation potential

within the relaxation time approximation. It was found that this channel of

scattering can play a considerable role in the low temperature transport at the

certain set of the model parameters. The low temperature experimental data were

fitted by including this mechanism of scattering along with ionized impurity and

charge dislocation ones

Electron Scattering Due to Dislocation Wall Strain Field in GaN Layers.

S.Krasavin: Journal of Applied Physics, 2009, 105[12], 126104