An investigation was made of the type, spatial distribution, line direction, and

electronic properties of dislocations in n-type GaN by scanning tunnelling

microscopy. Uncharged perfect dislocations were found having a/3{11•0} Burgers

vectors, and negatively charged Shockley partial dislocations with a/3{1¯1•0}

Burgers vectors, interconnected by a negatively charged stacking fault. The charges

were traced to different charge transfer levels associated with the particular core

structure.

Electronic Properties of Dislocations in GaN Investigated by Scanning Tunneling

Microscopy. P.Ebert, L.Ivanova, S.Borisova, H.Eisele, A.Laubsch, M.Dähne:

Applied Physics Letters, 2009, 94[6], 062104