Two-step selective epitaxy (SAG/ELO) of (11•2)GaN on a (113)Si substrate was

studied to reduce the defect density in the epitaxial lateral overgrowth. The first

SAG/ELO was to prepare a (11•2)GaN template on a (113)Si and the second

SAG/ELO was to get a uniform (11•2)GaN. It was found that the reduction of the

defect density was improved by optimizing the mask configuration in the second

SAG/ELO. The minimum dark spot density obtained was 3 x 107/cm2, which was

two orders of magnitude lower than that found in a (00•1)GaN grown on (111)Si.

Reduction of Dislocations in a (11¯22)GaN Grown by Selective MOVPE on (113)Si.

T.Tanikawa, Y.Kagohashi, Y.Honda, M.Yamaguchi, N.Sawaki: Journal of Crystal

Growth, 2009, 311[10], 2879-82