Unintentionally doped GaN with a conventional single low-temperature AlN buffer

layer, and with double MgxNy/AlN buffer layers, were prepared. It was found that it

was possible to reduce the defect density and thus improve the crystal quality of the

GaN by using double MgxNy/AlN buffer layers. Here, GaN with double

MgxNy/AlN buffer layers revealed an asymmetrical reflection (102) and (002) with

a smaller full-width at half-maximum, and a higher mobility, lower background

concentration and lower etching pit density than GaN with a low-temperature AlN

buffer layer.

Dislocation Reduction in GaN with Double MgxNy/AlN Buffer Layer by Metal

Organic Chemical Vapour Deposition. C.W.Kuo, Y.K.Fu, C.H.Kuo, L.C.Chang,

C.J.Tun, C.J.Pan, G.C.Chi: Journal of Crystal Growth, 2009, 311[2], 249-53