A reliable and quick method was reported for detecting threading dislocations in

GaN epitaxial layers grown onto (00•1) sapphire using aqueous KOH etching

maintained at 80C for 10min. Atomic force microscopy characterization of

topological profiles associated with etch-pits revealed asymmetrical and

symmetrical surface topologies. It was argued that high- and low-symmetry

profiles were associated with a and a + c type threading dislocations, whereas

symmetrical profiles were caused by c-type threading dislocations.

Characterization of Threading Dislocations in GaN Using Low-Temperature

Aqueous KOH Etching and Atomic Force Microscopy. I.Han, R.Datta, S.Mahajan,

R.Bertram, E.Lindow, C.Werkhoven, C.Arena: Scripta Materialia, 2008, 59[11],

1171-3