Total energy electronic-structure calculations were performed which were based

upon density functional theory and clarified the intrinsic magnetism of undoped

GaN. The magnetism was due to Ga, instead of N, vacancies. The magnetism arose

from the unpaired 2p electrons of N surrounding Ga vacancy. At a vacancy

concentration of 5.6%, the ferromagnetic state was 181meV lower than the

antiferromagnetic state. These findings were helpful in gaining a better

understanding of the structural and spin properties of the Ga vacancy in wurtzite

GaN and also provided a possible way of generating magnetic GaN by introducing

Ga vacancies instead of doping with transition-metal atoms.

Intrinsic Magnetism Induced by Vacancy in GaN. Z.Xiong, L.Luo, J.Peng, G.Liu:

Journal of Physics and Chemistry of Solids, 2009, 70[8], 1223-5