Time-resolved cathodoluminescence at 27K was performed on a-plane GaN grown

by epitaxial lateral overgrowth. The relaxation and recombination mechanisms of

excitons (free or bound to neutral donors, or bound to I1-type basal stacking faults)

were studied in relation to the local density of basal stacking faults. The slow

exciton capture rate on isolated basal stacking faults was described by a diffusion

model involving donors via a hopping process. Where the basal stacking faults

were organized into bundles, the shorter rise-time was related to intra-basal

stacking fault localization processes, and the multi-exponential decay was related

to the type-II band alignment of basal stacking faults in wurtzite GaN.

Low-Temperature Time-Resolved Cathodoluminescence Study of Exciton

Dynamics Involving Basal Stacking Faults in a-Plane GaN. P.Corfdir, J.Ristić,

P.Lefebvre, T.Zhu, D.Martin, A.Dussaigne, J.D.Ganière, N.Grandjean, B.Deveaud-

Plédran: Applied Physics Letters, 2009, 94[20], 201115