Nonpolar (11–20) GaN films with different basal-plane stacking fault (BSF)

densities (determined using transmission electron microscopy) were investigated

using X-ray diffraction. Diffuse streaking from I1 and I2 BSFs was observed in

reciprocal space maps of the 10–10 and 20–20 reflections. X-ray calibration curves

for BSF density determination can be plotted using the diffusely scattered intensity

of open detector 10–10 or 20–20 ω-scans measured at a fixed, large separation

from the peak maximum. However, ab initio determination of stacking fault

densities was not possible due to additional broadening from other defects.

Similarly, ω-scan peak widths were poor indicators of BSF densities.

Investigating Stacking Faults in Nonpolar Gallium Nitride Films Using X-Ray

Diffraction. M.A.Moram, C.F.Johnston, M.J.Kappers, C.J.Humphreys: Physica B,

2009, 404[16], 2189-91