The electrical and optical properties of the In-rich InAlN alloys were strongly

influenced by native point defects. Here the effects of the defects were studied

using 2MeV He+ irradiation to vary the defect concentration. Localized native

defects in In1−xAlxN (x < 0.45) were predominantly donors, with energy levels

located above the conduction band edge. Accordingly, the electron concentration

increases and the optical absorption edge blue shifts with increasing irradiation

fluence before saturating at high fluences. Saturation occurred when the Fermi

level reaches the Fermi level stabilization energy, which was the average energy of

localized native defects in semiconductors, at 4.9eV below the vacuum level. The

energy position of the native defects also explains the initial increase followed by the quenching of the photoluminescence intensity, as well as the blue shift in the

photoluminescence peak, with increasing irradiation fluence.

Properties of Native Point Defects in In1−xAlxN Alloys. R.E.Jones, S.X.Li, K.M.Yu,

J.W.Ager, E.E.Haller, W.Walukiewicz, H.Lu, W.J.Schaff: Journal of Physics D,

2009, 42[9], 095406