The origin of bulk electrons in In-face InN was studied by considering the effects

of both unintentionally incorporated impurities and threading dislocation densities

upon electron transport properties. The concentration of unintentionally

incorporated oxygen and hydrogen scaled with the bulk electron concentration

while threading dislocations had no discernable effect upon the electron

concentration. It was concluded that unintentional impurities were a significant

source of electrons and that threading dislocations acted only as scattering centers

limiting the electron mobility in as-grown InN films. Also presented were In-face

InN growth techniques which controlled the incorporation of oxygen and hydrogen

and reduced threading dislocation densities.

The Role of Threading Dislocations and Unintentionally Incorporated Impurities

on the Bulk Electron Conductivity of In-Face Inn. C.S.Gallinat, G.Koblmüller,

J.S.Speck: Applied Physics Letters, 2009, 95[2], 022103