Electronic structures of edge dislocations in InN films were studied using firstprinciples

calculations. It was found that dangling-bond states of In atoms localized

in the dislocation core were located above the conduction-band bottom and thus

supplied the electron carriers to the conduction band of bulk InN, in agreement

with the suggestion of Wang et al. (2007). Moreover, it was shown that the Fermi

energy in the conduction band had a tendency to be pinned at the energy positions

of N-related dangling-bond states. Electron-Carrier Generation by Edge Dislocations in InN Films: First-Principles

Study. Y.Takei, T.Nakayama: Journal of Crystal Growth, 2009, 311[10], 2767-71