Positron annihilation spectroscopy was used to study the effect of various growth

conditions upon vacancy formation in In-polar InN grown by plasma-assisted

molecular beam epitaxy. It was found that the stoichiometric conditions had little

effect upon the In vacancy concentration in the thin films. On the other hand, the

optimization of the GaN buffer used for initiating InN growth led to a lower In

vacancy concentration. This indicated that the structural quality of the material

dictated the In vacancy formation in InN, while the thermodynamic and kinetic

effects played a less important role; contrary to what was observed in, for example,

GaN.

Vacancy Defects Probed with Positron Annihilation Spectroscopy in In-Polar InN

Grown by Plasma-Assisted Molecular Beam Epitaxy: Effects of Growth

Conditions. F.Reurings, F.Tuomisto, C.S.Gallinat, G.Koblmüller, J.S.Speck:

Physica Status Solidi C, 2009, 6[S2], S401-4