The manifestations of non-impact creation mechanisms of Frenkel defects were

revealed in MgO and α-Al2O3 crystals irradiated at 295K by 2.20–2.4GeV U ions

providing an extremely high density of electronic excitations. Besides F and F+

centers, the creation of anion vacancies was detected in both ion-irradiated crystals

by measuring the emission spectra at the excitation by 5keV electrons at 9K. In

MgO, the stabilization of oxygen interstitials was conducted by their association

with the holes localized near cation vacancies. The creation, stabilization and

annealing of F centers, impurity defects and trifluorine F3

- molecules were

investigated in LiF:Mg,Ti irradiated by X-rays or 10 to 17eV photons. The role of

separated electrons and holes, anion excitons and near-impurity excitations in the

formation of thermally stimulated luminescence at 350–750K was clarified.

Stabilization (up to 650K) of H interstitials in LiF occurred via the formation of F3

-

molecules.

Stabilization and Annealing of Interstitials Formed by Radiation in Binary Metal

Oxides and Fluorides. A.Lushchik, C.Lushchik, K.Schwartz, E.Vasilchenko,

T.Kärner, I.Kudryavtseva, V.Isakhanyan, A.Shugai: Nuclear Instruments and

Methods in Physics Research B, 2008, 266[12-13], 2868-71