An investigation was made of the influence of dislocations, located at the interface

of a ferroelectric film and its underlying substrate, on the ferroelectric hysteresis

loop including the remanent polarization and coercive field using phase-field

simulations. Epitaxial ferro-electric BaTiO3 films were considered, and it was

found that the hysteresis loop was strongly dependent upon the type and density of

interfacial dislocations. The dislocations that stabilized multiple ferro-electric

variants and domains reduced the coercive field and consequently the

corresponding remanent polarization also decreased.

Influence of Interfacial Dislocations on Hysteresis Loops of Ferroelectric Films.

Y.L.Li, S.Y.Hu, S.Choudhury, M.I.Baskes, A.Saxena, T.Lookman, Q.X.Jia,

D.G.Schlom, L.Q.Chen: Journal of Applied Physics, 2008, 104[10], 104110