The kinetics and thermodynamics of point defect diffusion in non-stoichiometric

cuprous oxide, Cu2−yO, was studied 1173 to 1373K, under oxygen pressures of 102

to 7 x 104Pa, using microthermogravimetric re-equilibration. It was shown that the

defect diffusion coefficient of cation vacancies, constituting the predominant point

defects in this oxide does not change with their concentration, clearly indicating

that these defects do not interact and were randomly distributed in the crystal

lattice. Consequently, cation vacancy diffusion coefficient, DV, being the direct

measure of defect mobility, could be described by:

D (cm2/s) = 3.0 x 10-3exp[-52.4(kJ/mol)/RT]

Chemical Diffusion in Non-Stoichiometric Cuprous Oxide. Z.Grzesik,

M.Migdalska, S.Mrowec: Journal of Physics and Chemistry of Solids, 2008, 69[4],

928-33