Raman studies of Fe3O4 films of various thicknesses, grown onto single-crystal Si

and MgO substrates were used to investigate the presence of antiphase boundaries.

The X-ray diffraction and X-ray photo-electron spectroscopy measurements

indicated that the films were single-phase Fe3O4 on both substrates. The changes in

frequency and line-width of various Raman modes [A1g and T2g(3)] were

monitored, and the electron-phonon coupling parameter was computed. The latter

was correlated with the combined effect of strain and antiphase boundaries present

in the films and it was concluded that films grown on Si substrates were free from

antiphase boundaries. Probing Antiphase Boundaries in Fe3O4 Thin Films Using Micro-Raman

Spectroscopy. S.Tiwari, D.M.Phase, R.J.Choudhary: Applied Physics Letters,

2008, 93[23], 234108