The interface reactions in an epitaxial 10nm-thick Fe3O4/MgO(001) film were

investigated by using Rutherford back-scattering spectrometry, channelling

Rutherford back-scattering spectrometry and X-ray reflectometry. The as-grown

film had a good crystallinity, as indicated by the minimum yield and the half-angle

value for Fe: 22% and 0.62°, respectively. Annealing the films under partial argon

pressures up to 600C led to a large enhancement of Mg out-diffusion into the film;

forming a wustite-type phase. However, the total layer thickness did not change

appreciably. Ion irradiation of the film using a 1MeV Ar ion beam caused strong

Fe ion mixing, resulting in a large interfacial zone with a thickness of 23nm.

Thermal and Irradiation Induced Interdiffusion in Fe3O4/MgO(001) Thin Film.

N.T.H.Kim-Ngan, A.G.Balogh, J.D.Meyer, J.Brötz, S.Hummelt, M.Zając,

T.Ślęzak, J.Korecki: Nuclear Instruments and Methods in Physics Research B,

2009, 267[8-9], 1484-8